transistors with built-in resistor 1 publication date: december 2003 sjh00021bed unr4221/4222/4223/4224 (un4221/4222/4223/4224) silicon npn epitaxial planar type for digital circuits features ? costs can be reduced through downsizing of the equipment and reduction of the number of parts ? new s type package, allowing supply with the radial taping resistance by part number (r 1 )(r 2 ) ? unr4221 (un4221) 2.2 k ? 2.2 k ? ? unr4222 (un4222) 4.7 k ? 4.7 k ? ? UNR4223 (un4223) 10 k ? 10 k ? ? unr4224 (un4224) 2.2 k ? 10 k ? absolute maximum ratings t a = 25 c unit: mm electrical characteristics t a = 25 c 3 c parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 050 v collector-emitter voltage (base open) v ceo i c = 2 ma, i b = 050v collector-base cutoff current (emitter open) i cbo v cb = 50 v, i e = 0 1.0 a collector-emitter cutoff current (base open) i ceo v ce = 50 v, i b = 0 1.0 a emitter-base unr4221 i ebo v eb = 6 v, i c = 0 5.0 ma cutoff current unr4222 2.0 (collector open) UNR4223/4224 1.0 forward current unr4221 h fe v ce = 10 v, i c = 100 ma 40 ? transfer ratio unr4222 50 UNR4223/4224 60 collector-emitter saturation voltage v ce(sat) i c = 100 ma, i b = 5 ma 0.25 v output voltage high-level v oh v cc = 5 v, v b = 0.5 v, r l = 500 ? 4.9 v output voltage low-level v ol v cc = 5 v, v b = 3.5 v, r l = 500 ? 0.2 v internal connection b r 1 r 2 c e 1: emitter 2: collector 3: base ns-b1 package 4.0 0.2 0.75 max. 2.0 0.2 0.45 (2.5) (2.5) 0.7 0.1 23 1 +0.20 ?0.10 0.45 +0.20 ?0.10 7.6 3.0 0.2 (0.8) (0.8) 15.6 0.5 note) the part numbers in the parenthesis show conventional part number. parameter symbol rating unit collector-base voltage (emitter open) v cbo 50 v collector-emitter voltage (base open) v ceo 50 v collector current i c 500 ma total power dissipation p t 300 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c
unr4221/4222/4223/4224 2 sjh00021bed electrical characteristics (continued) t a = 25 c 3 c common characteristics chart p t ? t a parameter symbol conditions min typ max unit transition frequency f t v cb = 10 v, i e = ? 50 ma, f = 200 mhz 200 mhz input resistance unr4221/4224 r 1 ? 30% 2.2 + 30% k ? unr4222 4.7 UNR4223 10 resistance ratio r 1 /r 2 0.8 1.0 1.2 unr4224 0.17 0.22 0.27 0 0 160 40 120 80 100 300 200 400 total power dissipation p t ( mw ) ambient temperature t a ( c ) characteristics charts of unr4221 i c ? v ce v ce(sat) ? i c h fe ? i c i b = 1.0 ma 0.2 ma 0.1 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma 0 012 210 48 6 300 250 200 150 100 50 t a = 25 c collector-emitter voltage v ce (v) collector current i c (ma) 10 ? 2 1 10 ? 1 1 10 10 2 10 10 2 10 3 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) 0 1 100 200 300 400 10 10 2 10 3 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c (ma) note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors.
unr4221/4222/4223/4224 3 sjh00021bed c ob ? v cb i o ? v in v in ? i o characteristics charts of unr4222 i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o 0 10 ? 1 24 20 16 15 8 4 11010 2 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) 0.4 1.4 1.2 1.0 0.8 0.6 1 10 10 2 10 3 10 4 v o = 5 v t a = 25 c output current i o ( a) input voltage v in (v) 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 v o = 0.2 v t a = 25 c input voltage v in (v) output current i o (ma) 0 012 210 48 6 300 250 200 150 100 50 t a = 25 c i b = 1.0 ma 0.2 ma 0.1 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma collector-emitter voltage v ce (v) collector current i c (ma) 10 ? 2 1 10 ? 1 1 10 10 2 10 10 2 10 3 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) 0 1 50 100 150 200 10 10 2 10 3 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c (ma) 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 v o = 0.2 v t a = 25 c input voltage v in (v) output current i o (ma) 0.4 1.4 1.2 1.0 0.8 0.6 1 10 10 2 10 3 10 4 v o = 5 v t a = 25 c output current i o ( a) input voltage v in (v) 0 10 ? 1 12 10 8 6 4 2 11010 2 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v)
unr4221/4222/4223/4224 4 sjh00021bed characteristics charts of UNR4223 c ob ? v cb i o ? v in v in ? i o i c ? v ce v ce(sat) ? i c h fe ? i c characteristics charts of unr4224 i c ? v ce v ce(sat) ? i c h fe ? i c i b = 1.0 ma 0.2 ma 0.1 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma 0 012 210 48 6 240 200 160 120 80 40 t a = 25 c collector-emitter voltage v ce (v) collector current i c (ma) 10 ? 2 1 10 ? 1 1 10 10 2 10 10 2 10 3 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) 0 1 50 100 150 200 10 10 2 10 3 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c (ma) 0 10 ? 1 12 10 8 6 4 2 11010 2 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) 0.4 1.4 1.2 1.0 0.8 0.6 1 10 10 2 10 3 10 3 output current i o ( a) input voltage v in (v) v o = 5 v t a = 25 c 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 v o = 0.2 v t a = 25 c input voltage v in (v) output current i o (ma) i b = 1.0 ma 0.2 ma 0.1 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma 0 012 210 48 6 300 250 200 150 100 50 t a = 25 c collector-emitter voltage v ce (v) collector current i c (ma) 10 ? 2 1 10 ? 1 1 10 10 2 10 10 2 10 3 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) 0 1 50 100 150 200 10 10 2 10 3 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c (ma)
unr4221/4222/4223/4224 5 sjh00021bed c ob ? v cb i o ? v in v in ? i o 0 10 ? 1 12 10 8 5 4 2 11010 2 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) 0.4 1.4 1.2 1.0 0.8 0.6 1 10 10 2 10 3 10 4 v o = 5 v t a = 25 c output current i o ( a) input voltage v in (v) 10 ? 1 10 ? 1 1 10 10 2 10 3 11010 2 v o = 0.2 v t a = 25 c input voltage v in (v) output current i o (ma)
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